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IRG4RC10UDPBF

  • IRG4RC10UDPBF
  • IRG4RC10UDPBF

IRG4RC10UDPBF

IRG4RC10UDPBF

Infineon Technologies

IRG4RC10UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4RC10UDPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 350.003213mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 38W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 8.5A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number IRG4RC10UDPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 38W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 40 ns
Transistor Application POWER CONTROL
Rise Time 16ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 87 ns
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 8.5A
Reverse Recovery Time 28 ns
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.6V
Max Breakdown Voltage 600V
Turn On Time 56 ns
Test Condition 480V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 5A
Turn Off Time-Nom (toff) 345 ns
Gate Charge 15nC
Current - Collector Pulsed (Icm) 34A
Td (on/off) @ 25°C 40ns/87ns
Switching Energy 140μJ (on), 120μJ (off)
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 210ns
Height 1.2446mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.202125 $7.202125
10 $6.794457 $67.94457
100 $6.409865 $640.9865
500 $6.047043 $3023.5215
1000 $5.704757 $5704.757
IRG4RC10UDPBF Product Details

IRG4RC10UDPBF Description


The IRG4RC10UDPBF  is an UltraFast CoPack IGBT. Generation 4 IGBT offers the highest efficiencies available.



IRG4RC10UDPBF Features


  • Ultra Fast is Optimized for medium operating frequencies( 8- 40 kHz in hard switching, >200 kHz in resonant mode).

  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than the previous generation

  • IGBT co-packaged with HEXFREDTM ultrafast, in uiltra-soft-recovery anti-parallel diodes for use bridge configurations

  • Industry-standard TO 252AA package

  • Lead-Free



IRG4RC10UDPBF Applications


  • Industrial 

  • General Applications


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