IRG4RC10UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4RC10UPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Supplier Device Package
D-Pak
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Max Power Dissipation
38W
Current Rating
8.5A
Base Part Number
IRG4RC10UPBF
Element Configuration
Single
Power Dissipation
38W
Input Type
Standard
Power - Max
38W
Rise Time
11ns
Collector Emitter Voltage (VCEO)
2.6V
Max Collector Current
8.5A
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
8.5A
Collector Emitter Saturation Voltage
2.6V
Test Condition
480V, 5A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 5A
Gate Charge
15nC
Current - Collector Pulsed (Icm)
34A
Td (on/off) @ 25°C
19ns/116ns
Switching Energy
80μJ (on), 160μJ (off)
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$9.478459
$9.478459
10
$8.941943
$89.41943
100
$8.435795
$843.5795
500
$7.958297
$3979.1485
1000
$7.507827
$7507.827
IRG4RC10UPBF Product Details
IRG4RC10UPBF Description
IRG4RC10UPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 8-40 kHz in hard switching, and>200 kHz in resonant mode. As a Generation 4 IGBT, it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4RC10UPBF IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.