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SIGC18T60UNX1SA2

SIGC18T60UNX1SA2

SIGC18T60UNX1SA2

Infineon Technologies

SIGC18T60UNX1SA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC18T60UNX1SA2 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2016
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code R-XUUC-N2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Dual Supply Voltage 600V
Current - Collector (Ic) (Max) 20A
Turn On Time 23.5 ns
Test Condition 400V, 20A, 2.2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.15V @ 15V, 20A
Turn Off Time-Nom (toff) 100 ns
IGBT Type NPT
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 15ns/65ns
RoHS Status ROHS3 Compliant
Lead Free Lead Free
SIGC18T60UNX1SA2 Product Details

SIGC18T60UNX1SA2 Description

 

SIGC18T60UNX1SA2 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC18T60UNX1SA2 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

SIGC18T60UNX1SA2 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

SIGC18T60UNX1SA2 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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