APTGT35DA120D1G

new-10%

Manufacturer part number:APTGT35DA120D1G

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 1200V 55A 205W D1

Case Package:SOT-23

Datasheet:APTGT35DA120D1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	D1
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2004
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	7
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation	205W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	7
JESD-30 Code	R-XUFM-X7
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	205W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	55A
Current - Collector Cutoff (Max)	5mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	2.5nF
Turn On Time	280 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 35A
Turn Off Time-Nom (toff)	830 ns
IGBT Type	Trench Field Stop
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	2.5nF @ 25V
RoHS Status	RoHS Compliant