IRG5U100HF12B datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IRG5U100HF12B Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
POWIR® 62 Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
780W
Configuration
Half Bridge
Power - Max
780W
Input
Standard
Collector Emitter Voltage (VCEO)
3.5V
Max Collector Current
180A
Current - Collector Cutoff (Max)
2mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
12nF
Vce(on) (Max) @ Vge, Ic
3.5V @ 15V, 100A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
12nF @ 25V
RoHS Status
RoHS Compliant
IRG5U100HF12B Product Details
IRG5U100HF12B Description
IRG5U100HF12B is a 1200v High-Side Chopper IGBT with Low-Side Diode. The transistor can be applied in IRG5U100HF12B industrial motor drive, uninterruptible Power Supply, welding and Cutting Machine, switched Mode Power Supply, and induction Heating applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor IRG5U100HF12B is in the POWIR 62? package with 780W Power dissipation.