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IRG6S330UPBF

IRG6S330UPBF

IRG6S330UPBF

Infineon Technologies

IRG6S330UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG6S330UPBF Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Max Power Dissipation 160W
Element Configuration Single
Power Dissipation 160W
Input Type Standard
Power - Max 160W
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 70A
Collector Emitter Breakdown Voltage 330V
Voltage - Collector Emitter Breakdown (Max) 330V
Current - Collector (Ic) (Max) 70A
Collector Emitter Saturation Voltage 2.1V
Test Condition 196V, 25A, 10Ohm
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 70A
IGBT Type Trench
Gate Charge 86nC
Td (on/off) @ 25°C 39ns/120ns
Radiation Hardening No
RoHS Status RoHS Compliant
IRG6S330UPBF Product Details

IRG6S330UPBF Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.



IRG6S330UPBF Features

Advanced Trench IGBT Technology

Optimized for Sustain and Energy Recovery circuits in PDP applications

Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency

High repetitive peak current capability

Lead-Free package


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