IRG6S330UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG6S330UPBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Supplier Device Package
D2PAK
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
160W
Element Configuration
Single
Power Dissipation
160W
Input Type
Standard
Power - Max
160W
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
70A
Collector Emitter Breakdown Voltage
330V
Voltage - Collector Emitter Breakdown (Max)
330V
Current - Collector (Ic) (Max)
70A
Collector Emitter Saturation Voltage
2.1V
Test Condition
196V, 25A, 10Ohm
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 70A
IGBT Type
Trench
Gate Charge
86nC
Td (on/off) @ 25°C
39ns/120ns
Radiation Hardening
No
RoHS Status
RoHS Compliant
IRG6S330UPBF Product Details
IRG6S330UPBF Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.
IRG6S330UPBF Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency