IRG7CH23K10EF Description

IRG7CH23K10EF transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7CH23K10EF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG7CH23K10EF has the common source configuration.

IRG7CH23K10EF Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRG7CH23K10EF Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display