SIGC14T60NCX7SA2 Description

SIGC14T60NCX7SA2 belongs to the family of insulated gate bipolar transistor provided by Infineon Technologies. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of power transistor (Giant Transistor-GTR) and power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 

SIGC14T60NCX7SA2 Features

Operating Temperature: -55°C~150°C TJ

Current - Collector (Ic) (Max): 15A

Current - Collector Pulsed (Icm): 45A

Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A

SIGC14T60NCX7SA2 Applications

Welding

PFC

UPS