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IRGC100B60KC

IRGC100B60KC

IRGC100B60KC

Infineon Technologies

IRGC100B60KC datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGC100B60KC Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -55°C~150°C
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Reverse Recovery Time 130ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 100A
RoHS Status ROHS3 Compliant
IRGC100B60KC Product Details

IRGC100B60KC Description


IRGC100B60KC manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) nonpunch through IGBT technology. Moreover, the IRGC100B60KC IGBT delivers rugged transient performance and low EMI.



IRGC100B60KC Features


10μs short circuit capability

Square RBSOA

Ultrasoft diode reverse recovery characteristics

Positive VCE (on) temperature coefficient



IRGC100B60KC Applications


UPS

Motor control


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