IRGC100B60KC datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGC100B60KC Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-55°C~150°C
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Reverse Recovery Time
130ns
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
100A
RoHS Status
ROHS3 Compliant
IRGC100B60KC Product Details
IRGC100B60KC Description
IRGC100B60KC manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) nonpunch through IGBT technology. Moreover, the IRGC100B60KC IGBT delivers rugged transient performance and low EMI.