IRG7CH28UEF

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Manufacturer part number:IRG7CH28UEF

Manufacturer:Infineon Technologies

Description:IRG7CH28UEF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG7CH28UEF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	Die
Operating Temperature	-40°C~175°C TJ
Packaging	Bulk
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Input Type	Standard
Collector Emitter Voltage (VCEO)	1.55V
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Test Condition	600V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.55V @ 15V, 2.5A
Gate Charge	60nC
Td (on/off) @ 25°C	35ns/225ns
RoHS Status	RoHS Compliant

A INSULATED GATE BIPOLAR TRANSISTOR is IRG7CH28UEF.

high switching frequencies and efficiency across a wide range of applications
Higher power capability and robust hard switching performance result in improved reliability.
excellent parallel operation with current sharing