IRG7CH35UEF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG7CH35UEF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-40°C~175°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
Input Type
Standard
Collector Emitter Voltage (VCEO)
1.6V
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Test Condition
600V, 20A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic
1.6V @ 15V, 5A
Gate Charge
85nC
Td (on/off) @ 25°C
30ns/160ns
RoHS Status
RoHS Compliant
IRG7CH35UEF Product Details
IRG7CH35UEF Description
A bipolar transistor is a semiconductor device commonly used for amplification. The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. Physically, a bipolar transistor amplifies current, but it can be connected in circuits designed to amplify voltage or power.
IRG7CH35UEF Applications
· Medium Power Drives
· UPS
· HEV Inverter
· Welding
· Induction Heating
IRG7CH35UEF Features
Low VCEIONand switchingLosses
Square RBSOA and Maximum Junction Temperature175°℃