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IRG7CH35UEF

IRG7CH35UEF

IRG7CH35UEF

Infineon Technologies

IRG7CH35UEF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7CH35UEF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -40°C~175°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Input Type Standard
Collector Emitter Voltage (VCEO) 1.6V
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 20A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 5A
Gate Charge 85nC
Td (on/off) @ 25°C 30ns/160ns
RoHS Status RoHS Compliant
IRG7CH35UEF Product Details

IRG7CH35UEF               Description

 

A bipolar transistor is a semiconductor device commonly used for amplification. The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. Physically, a bipolar transistor amplifies current, but it can be connected in circuits designed to amplify voltage or power.

 

IRG7CH35UEF                     Applications


· Medium Power Drives

· UPS

· HEV Inverter

· Welding

· Induction Heating

 

IRG7CH35UEF                          Features


 Low VCEIONand switchingLosses

 Square RBSOA and Maximum Junction Temperature175°℃

 Positive VCE oNTemperature Coefficient

 


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