IRGC50B60KB Description

The IRGC50B60KB is a 600 V, N-CHANNEL IGBT. BJT and MOSFET are combined to create the IGBT, or Insulated Gate Bipolar Transistor. Additionally, the merger between them is implied by the name. The term "insulated gate" describes a MOSFET's extremely high input impedance. It uses the voltage at its gate terminal to drive its operations rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both types of charge carriers contribute to the current flow. It enables it to operate with very high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device thanks to this hybrid configuration.

IRGC50B60KB Features

• 10μs Short Circuit Capability

• Square RBSOA

• Positive VCE(on) Temperature Coefficient

• GEN5 Non Punch Through (NPT) Technology

• Low VCE(on)

• Excellent Current Sharing in Parallel Operation

• Qualified for Industrial Market

• Benchmark Efficiency for Motor Control Applications

• Rugged Transient Performance

IRGC50B60KB Applications

• It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

• It is used in UPS (Uninterruptible Power Supply) system.

• It is used in AC and DC motor drives offering speed control.

• It is used in chopper and inverters.

• It is used in solar inverters.