IRG7CH54K10EF-R Description

The IRG7CH54K10EF-R is a Single IGBTs. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

IRG7CH54K10EF-R Features

• Maximum Junction Temperature 175°C

• Positive VCE (ON) Temperature Coefficient

• 10μs Short Circuit SOA and Square RBSOA

• Low VCE(ON) and switching Losses

• VCES = 1200V

• IC(Nominal) = 50A 

• TJ(max) = 175°C

• VCE(on) typ = 1.9V @ IC= 50A

IRG7CH54K10EF-R Applications

• Medium Power Drives

• UPS

• HEV Inverter

• Welding