IRG7PH42UD1MPBF Description

IRG7PH42UD1MPBF is a 1200v insulated gate bipolar transistor with an ultra-low VF diode. The Infineon IRG7PH42UD1MPBF is optimized for induction heating and soft-switching applications. The IRG7PH42UD1MPBF provides High Efficiency due to Low VCE(on), low switching losses, and Ultra-low VF. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG7PH42UD1MPBF is in the TO-247AD package with 313W power dissipation.

IRG7PH42UD1MPBF Features

Low VcE (ON) trench IGBT technology

Low switching losses

Square RBSOA

Ultra-low VF Diode

1300Vpk repetitive transient capacity

100% of the parts tested for LM①

Positive VcE (ON) temperature coefficient

Tight parameter distribution

Lead-free package

IRG7PH42UD1MPBF Applications

Automotive 

Hybrid, electric & powertrain systems 

Communications equipment 

Datacom module 

Enterprise systems 

Enterprise machine