NGTB40N120L3WG Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on?state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage.
NGTB40N120L3WG Features

● Extremely Efficient Trench with Field Stop Technology
● TJmax = 175°C
● Soft Fast Reverse Recovery Diode
● Optimized for Low VCEsat
● Pb?Free Devices
NGTB40N120L3WG Applications

● Solar Inverter and UPS
● Industrial Switching
● Welding
● New Energy Vehicle
● Photovoltaic & Wind Power Generation
● Smart Grid