IRG7PH42UD2-EP Description

IRG7PH42UD2-EP is a 1200V insulated gate bipolar transistor with an ultra-low VF diode for induction heating and soft switching applications. The Infineon IRG7PH42UD2-EP has high efficiency due to Low VCE(on), Low Switching Losses, and Ultra-low VF.  The Operating and Storage Temperature Range is between -55 and 150℃. And the Amplifier IRG7PH42UD2-EP is in the TO-247ADpackage with 321W power dissipation.

IRG7PH42UD2-EP Features

Low VcE (ON) Trench IGBT Technology

Low Switching Losses

Square RBSOA

100% of the parts tested for 4X rated current (L .M)

Positive VCE (ON) Temperature coefficient

Ultra-low VF Diode

Tight parameter distribution

Lead-Free Package

IRG7PH42UD2-EP Applications

Automotive 

Hybrid, electric & powertrain systems 

Enterprise systems 

Enterprise projectors 

Personal electronics 

Home theater & entertainment