IRG7T200CH12B datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IRG7T200CH12B Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
POWIR® 62 Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
1.06kW
Configuration
Single
Power - Max
1060W
Input
Standard
Collector Emitter Voltage (VCEO)
2.2V
Max Collector Current
390A
Current - Collector Cutoff (Max)
2mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
22.5nF
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 200A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
22.5nF @ 25V
RoHS Status
RoHS Compliant
IRG7T200CH12B Product Details
IRG7T200CH12B Description
IRG7T200CH12B is a 1200v High-Side Chopper IGBT with Low-Side Diode. The transistor can be applied in IRG7T200CH12B industrial motor drive, uninterruptible Power Supply, welding and Cutting Machine, and switched Mode Power Supply applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor IRG7T200CH12B is in the POWIR 62? package with 1060W Power dissipation.