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IRG7T200CH12B

IRG7T200CH12B

IRG7T200CH12B

Infineon Technologies

IRG7T200CH12B datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IRG7T200CH12B Datasheet

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Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case POWIR® 62 Module
Operating Temperature -40°C~150°C TJ
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1.06kW
Configuration Single
Power - Max 1060W
Input Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 390A
Current - Collector Cutoff (Max) 2mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 22.5nF
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 200A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 22.5nF @ 25V
RoHS Status RoHS Compliant
IRG7T200CH12B Product Details

IRG7T200CH12B Description


IRG7T200CH12B is a 1200v High-Side Chopper IGBT with Low-Side Diode. The transistor can be applied in IRG7T200CH12B industrial motor drive, uninterruptible Power Supply, welding and Cutting Machine, and switched Mode Power Supply applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor IRG7T200CH12B is in the POWIR 62? package with 1060W Power dissipation.



IRG7T200CH12B Features


Low VCE(ON) and Switching Losses

RBSOA Tested

10μsec Short Circuit Safe Operating Area

POWIR 62? Package

Lead-Free



IRG7T200CH12B Applications


Industrial Motor Drive

Uninterruptible Power Supply

Welding and Cutting Machine

Switched Mode Power Supply


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