APTGF200A120D3G

new-10%

Manufacturer part number:APTGF200A120D3G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 1.2KV 300A 11-Pin Case D-3

Case Package:SOT-23

Datasheet:APTGF200A120D3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	D-3 Module
Number of Pins	11
Published	2012
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	11
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	1.4kW
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	11
Number of Elements	2
Configuration	Half Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	1400W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	300A
Current - Collector Cutoff (Max)	5mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	13nF
Turn On Time	180 ns
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 200A
Turn Off Time-Nom (toff)	590 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	13nF @ 25V
VCEsat-Max	3.7 V
RoHS Status	RoHS Compliant