IRG7T200CL12B Description

IRG7T200CL12B transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7T200CL12B MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

IRG7T200CL12B Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRG7T200CL12B Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display