APTGV50H60T3G

new-10%

Manufacturer part number:APTGV50H60T3G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 600V 80A/80A/65A/65A 32-Pin Case SP-3

Case Package:SOT-23

Datasheet:APTGV50H60T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	3
Published	2012
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	25
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	176W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X25
Qualification Status	Not Qualified
Number of Elements	4
Configuration	Full Bridge Inverter
Case Connection	ISOLATED
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	3.15nF
Turn On Time	170 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 50A
Turn Off Time-Nom (toff)	310 ns
IGBT Type	NPT, Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.15nF @ 25V
VCEsat-Max	2.45 V
RoHS Status	RoHS Compliant