IRG8CH137K10F Description

IRG8CH137K10F is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in wide range of applications. Due to its 10 μs short circuit SOA and square RBSOA, it is able to provide rugged transient performance. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tight parameter distribution. A maximum junction temperature of 175°C ensures increased reliability.

IRG8CH137K10F Features

10μs short circuit SOA

Square RBSOA

Positive VCE(ON) temperature coefficient

Low VCE(ON) and switching losses

Tight parameter distribution 

IRG8CH137K10F Applications

Industrial motor drives

UPS

HEV inverter

Welding