IRG8CH20K10F Description

The IRG8CH20K10F is an N-Channel insulated gate bipolar transistor. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The union between them is also implied by the name. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.

IRG8CH20K10F Features

• VCES = 1200V

• IC(Nominal) = 15A

• TJ(max) = 175°C

• VCE(on) typ = 1.7V @ IC= 15A

• Low VCE(on) Trench IGBT Technology

• Low Switching Losses

• Very Soft Turn-off Characteristics

• 10μs Short Circuit SOA

• Square RBSOA

• Positive VCE(on) Temperature Coefficient 

IRG8CH20K10F Applications

• Industrial Motor Drives

• UPS 

• HEV Inverter 

• Welding