IRG8CH42K10F Description

IRG8CH42K10F transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG8CH42K10F MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG8CH42K10F has the common source configuration.

IRG8CH42K10F Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRG8CH42K10F Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display