GT50J121(Q)

new-10%

Manufacturer part number:GT50J121(Q)

Manufacturer:Toshiba Semiconductor and Storage

Description:Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P(LH)

Case Package:SOT-23

Datasheet:GT50J121(Q) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3PL
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Tube
Published	2006
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	240W
Element Configuration	Single
Input Type	Standard
Power - Max	240W
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	50A
Collector Emitter Breakdown Voltage	600V
Test Condition	300V, 50A, 13 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 50A
Current - Collector Pulsed (Icm)	100A
Td (on/off) @ 25°C	90ns/300ns
Switching Energy	1.3mJ (on), 1.34mJ (off)
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free