IRGC15B60KB Description

The TRENCHSTOPTM IGBT is a benchmark in the industry and combines the exclusive Trench- and Fieldstop-Technology. Several distinct versions of the voltage range from 600V to 1700V are included in the portfolio, which is designed for a variety of applications including drives, renewable energy, welding, and power supply. Fast Recovery Diode technology invented by Infineon is called Emitter Controlled-Diode. The Emitter Controlled-Diode from Infineon is best suited for consumer and industrial applications because it lowers the turn-on losses of the IGBT with soft recovery thanks to its ultrathin wafer and field-stop technology. For Infineon IGBT technology, the Emitter Controlled-Diode is optimized.

IRGC15B60KB Features

• Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 3A

• Voltage - Collector Emitter Breakdown (Max): 600V

• Transistor Application: MOTOR CONTROL

• Current - Collector (Ic) (Max): 15A

• JESD-30 Code: O-XUUC-N

IRGC15B60KB Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial