IRG8CH50K10F Description

IRG8CH50K10F is a 1200v insulated gate bipolar transistor. The Infineon IRG8CH50K10F provides high efficiency in a wide range of applications and is suitable for a wide range of switching frequencies. The IRG8CH50K10F is designed for a wide range of applications, such as Industrial Motor Drives, UPS, HEV inverters, and Welding. The Operating and Storage Temperature Range is between -40 and 175℃. 

IRG8CH50K10F Features

Low VcE(on) Trench IGBT Technology

Low Switching Losses

Very Soft Turn-off Characteristics

10μs Short Circuit SOA

Square RBSOA

Tight Parameter Distribution

Positive VcE(on) Temperature Coefficient

TJ(max)= 175°C

IRG8CH50K10F Applications

Industrial Motor Drives

UPS

HEV Inverter

Welding