SIGC25T60NCX1SA7 Description

The SIGC25T60NCX1SA7 is an IGBT Chip in NPT-technology. A three-terminal power semiconductor called an insulated-gate bipolar transistor (IGBT) is largely employed as an electronic switch. As IGBT technology advanced, it became possible to combine high efficiency with quick switching. The metal-oxide-semiconductor (MOS) gate structure governs its four alternating layers (P-N-P-N).

SIGC25T60NCX1SA7 Features

• Positive temperature coefficient

• Easy paralleling

• 600V NPT technology

• 100μm chip

SIGC25T60NCX1SA7 Applications

• Drives

• Consumer electronics

• Industrial technology

• The energy sector

• Aerospace electronic devices

• Transportation