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RGT00TS65DGC11

RGT00TS65DGC11

RGT00TS65DGC11

ROHM Semiconductor

650V 50A FIELD STOP TRENCH IGBT

SOT-23

RGT00TS65DGC11 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 277W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 54ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 85A
Turn On Time 110 ns
Test Condition 400V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Turn Off Time-Nom (toff) 225 ns
IGBT Type Trench Field Stop
Gate Charge 94nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 42ns/137ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.472000 $5.472
10 $5.162264 $51.62264
100 $4.870061 $487.0061
500 $4.594397 $2297.1985
1000 $4.334337 $4334.337

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