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IRG8P08N120KDPBF

IRG8P08N120KDPBF

IRG8P08N120KDPBF

Infineon Technologies

IRG8P08N120KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG8P08N120KDPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 89W
Reach Compliance Code unknown
Element Configuration Single
Input Type Standard
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 8A
Reverse Recovery Time 50 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 15A
Collector Emitter Saturation Voltage 1.7V
Test Condition 600V, 5A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 5A
Gate Charge 45nC
Td (on/off) @ 25°C 20ns/160ns
Switching Energy 300μJ (on), 300μJ (off)
Height 20.7mm
Length 15.87mm
Width 5.31mm
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.989000 $3.989
10 $3.763208 $37.63208
100 $3.550196 $355.0196
500 $3.349241 $1674.6205
1000 $3.159662 $3159.662
IRG8P08N120KDPBF Product Details

IRG8P08N120KDPBF Description


A Bipolar Insulated Gate Transistor with an Ultrafast Soft Recovery Diode, IRG8P08N120KDPBF



IRG8P08N120KDPBF Features


  • Standard Low VCE (ON)

  • Short Circuit 10 s SOA I

  • RBSOA square and a strong ILM- rating

  • Lead-Free



IRG8P08N120KDPBF Applications


  • Drive for industrial motors

  • UPS

  • Sun Inverters

  • Welder


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