IKB40N65EH5ATMA1 Description

The IKB40N65EH5ATMA1 is a Hard-switching 650 V, 40 A TRENCHSTOP? 5 high-speed IGBT discrete in D2Pak (TO263) package co-packed with fully rated current Rapid 1 anti-parallel diode, redefining “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications.

IKB40N65EH5ATMA1 Features

• 650 V breakthrough voltage Compared to Infineon’s HighSpeed 3 family

• Factor 2.5 lower Q_g

• Factor 2 reduction in switching losses

• 200 mV reduction in V_CEsat

• Co-packed with Infineon’s new Rapid Si-diode technology 

• Low C_OES /E_OSS

• Mild positive temperature coefficient V_CEsat

• Temperature stability of V_f

IKB40N65EH5ATMA1 Applications

• Industrial heating and welding

• Power Management (SMPS) - Reference Design

• Solutions for photovoltaic energy systems