STGWT60H65DFB Description

The STGWT60H65DFB device is IGBT developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGWT60H65DFB Features

Maximum junction temperature: TJ = 175 °C
High speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A
Tight parameter distribution
Safe paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast soft recovery antiparallel diode
STGWT60H65DFB Applications

Photovoltaic inverters
High-frequency converters
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid