Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3V
Max Collector Current	60A
Reverse Recovery Time	180 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.4V
Turn On Time	135 ns
Test Condition	600V, 40A, 39 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 40A
Turn Off Time-Nom (toff)	490 ns
IGBT Type	NPT
Gate Charge	150nC
Switching Energy	6.1mJ (on), 3mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	RoHS Compliant

IXEH40N120

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