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FGA20S125P-SN00336

FGA20S125P-SN00336

FGA20S125P-SN00336

ON Semiconductor

FGA20S125P-SN00336 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGA20S125P-SN00336 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Weight 6.401g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Input Type Standard
Power - Max 250W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 40A
Collector Emitter Breakdown Voltage 1.25kV
Voltage - Collector Emitter Breakdown (Max) 1250V
Test Condition 600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
IGBT Type Trench
Gate Charge 153nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 10ns/400ns
Switching Energy 740μJ (on), 500μJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.963205 $1.963205
10 $1.852080 $18.5208
100 $1.747245 $174.7245
500 $1.648345 $824.1725
1000 $1.555042 $1555.042
FGA20S125P-SN00336 Product Details

FGA20S125P-SN00336 Description


The FGA20S125P-SN00336  is a shorted-anode IGBT which can be operated in parallel configuration with exceptional avalanche capability.



FGA20S125P-SN00336 Features


  • High-Speed Switching

  • Low Saturation Voltage: VcE(san)=2.0V @|c=20 A 

  • High Input Impedance

  • RoHS Compliant



FGA20S125P-SN00336 Applications


  • Induction Heating

  • Microwave oven


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