IRGB4062DPBF

new-10%

Manufacturer part number:IRGB4062DPBF

Manufacturer:Infineon Technologies

Description:IRGB4062DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGB4062DPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Number of Elements	1
Element Configuration	Single
Power Dissipation	250W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	53 ns
Transistor Application	POWER CONTROL
Rise Time	22ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	115 ns
Collector Emitter Voltage (VCEO)	1.95V
Max Collector Current	48A
Reverse Recovery Time	89 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.65V
Turn On Time	64 ns
Test Condition	400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 24A
Turn Off Time-Nom (toff)	164 ns
IGBT Type	Trench
Gate Charge	50nC
Current - Collector Pulsed (Icm)	72A
Td (on/off) @ 25°C	41ns/104ns
Switching Energy	115μJ (on), 600μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	41ns
Height	9.02mm
Length	10.6426mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free