STGWA35HF60WDI datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
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STGWA35HF60WDI Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
260W
Base Part Number
STGW35
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
260W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
70A
Reverse Recovery Time
85 ns
Collector Emitter Breakdown Voltage
600V
Turn On Time
45 ns
Test Condition
390V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 20A
Turn Off Time-Nom (toff)
295 ns
Gate Charge
140nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
30ns/175ns
Switching Energy
185μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.55000
$5.55
30
$4.71333
$141.3999
120
$4.08475
$490.17
510
$3.47729
$1773.4179
STGWA35HF60WDI Product Details
STGWA35HF60WDI Description
STGWA35HF60WDI is a 600v ultrafast IGBT with a low drop diode. This ultrafast IGBT STGWA35HF60WDI is developed using new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency
operation (over 100 kHz). The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor STGWA35HF60WDI is in the TO-247 package with 200W power dissipation.
STGWA35HF60WDI Features
Improved Eoff at elevated temperature
Low CRES/ CIEs ratio (no cross-conduction susceptibility)
Low VF soft recovery antiparallel diode
Continuous collector current at TC = 100 °C: 35A
Turn-off latching current: 80A
Storage and Operating junction temperature: -55 to 150℃