STGWA35HF60WDI Description

STGWA35HF60WDI is a 600v ultrafast IGBT with a low drop diode. This ultrafast IGBT STGWA35HF60WDI is developed using new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency

operation (over 100 kHz). The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor STGWA35HF60WDI is in the TO-247 package with 200W power dissipation.

STGWA35HF60WDI Features

Improved Eoff at elevated temperature

Low CRES/ CIEs ratio (no cross-conduction susceptibility)

Low VF soft recovery antiparallel diode

Continuous collector current at TC = 100 °C: 35A

Turn-off latching current: 80A

Storage and Operating junction temperature: -55 to 150℃

STGWA35HF60WDI Applications

Welding

Induction heating

Resonant converters

Industrial 

Electronic point of sale (EPOS) 

Enterprise systems 

Datacenter & enterprise computing 

Personal electronics 

Tablets