STGWA60H65DFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGWA60H65DFB Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
375W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGWA60
Element Configuration
Single
Input Type
Standard
Power - Max
375W
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
80A
Reverse Recovery Time
60 ns
Collector Emitter Breakdown Voltage
650V
Test Condition
400V, 60A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 60A
IGBT Type
Trench Field Stop
Gate Charge
306nC
Current - Collector Pulsed (Icm)
240A
Td (on/off) @ 25°C
66ns/210ns
Switching Energy
1.59mJ (on), 900μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.95000
$5.95
30
$5.10500
$153.15
120
$4.47500
$537
510
$3.86600
$1971.66
1,020
$3.32000
$3.32
2,520
$3.18000
$6.36
STGWA60H65DFB Product Details
STGWA60H65DFB Description
These gadgets are IGBTs that were created employing a cutting-edge, exclusive trench gate fieldstop structure. These components are a part of the latest generation of IGBTs, the HB series, which offer the best conduction and switching loss trade-offs for maximizing the efficiency of any frequency converter. Additionally, the extremely narrow parameter distribution and slightly positive VCE(sat) temperature coefficient lead to safer paralleling operation.
STGWA60H65DFB Features
? a narrow parameter distribution
? Paralleling safely
? A high temperature coefficient for VCE(sat)
? Low thermal conductivity
? Antiparallel diode with very quick soft recovery