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IRGB4710DPBF

IRGB4710DPBF

IRGB4710DPBF

Infineon Technologies

IRGB4710DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGB4710DPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status RoHS Compliant
IRGB4710DPBF Product Details

IRGB4710DPBF Description


IRGB4710DPBF is a 100v HEXFET? Power MOSFET. The Infineon IRGB4710DPBF can be applied in High-frequency DC-DC converters, Motor Control, and Uninterruptible Power Supplies. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IRGB4710DPBF is in the TO-220AB package with 3.8W power dissipation. 



IRGB4710DPBF Features


Low Gate-to-Drain Charge to Reduce Switching Losses

Fully Characterized Capacitance Including Effective COSS to Simplify Design

Fully Characterized Avalanche Voltage and Current

Continuous Drain Current, VGS @ 10V ID @ TC = 25°C: 75A

Lead-Free



IRGB4710DPBF Applications


High-frequency DC-DC converters

Motor Control

Uninterruptible Power Supplies

Communications equipment 

Broadband fixed line access 

Enterprise systems 

Datacenter & enterprise computing 

Personal electronics 

Portable electronics


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