IRG7CH81K10EF-R

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Manufacturer part number:IRG7CH81K10EF-R

Manufacturer:Infineon Technologies

Description:IRG7CH81K10EF-R datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG7CH81K10EF-R Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	Die
Operating Temperature	-40°C~175°C TJ
Packaging	Bulk
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Subcategory	Insulated Gate BIP Transistors
Input Type	Standard
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.3V
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Test Condition	600V, 150A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 150A
Collector Current-Max (IC)	150A
Gate Charge	745nC
Td (on/off) @ 25°C	70ns/330ns
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	7.5V
RoHS Status	RoHS Compliant