IGC10T65QEX1SA1

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Manufacturer part number:IGC10T65QEX1SA1

Manufacturer:Infineon Technologies

Description:IGC10T65QEX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IGC10T65QEX1SA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	Die
Operating Temperature	-40°C~175°C TJ
Published	2012
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	20A
Vce(on) (Max) @ Vge, Ic	2.32V @ 15V, 20A
IGBT Type	Trench Field Stop
Current - Collector Pulsed (Icm)	60A
RoHS Status	ROHS3 Compliant

IGC10T65QEX1SA1 Description

IGC10T65QEX1SA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGC10T65QEX1SA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IGC10T65QEX1SA1 has the common source configuration.

IGC10T65QEX1SA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IGC10T65QEX1SA1 Applications

ISM applications

DC large signal applications

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