IRGBC30F IGBT Description

This Insulated Gate Bipolar Transistors (IGBT) IRGBC30F from Infineon have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. It provides substantial benefits to a host of high-voltage, high-current applications. It has low switching losses and low EMI.

IRGBC30F IGBT Features

Optimized for medium operating frequency ( 1 to 10kHz)

Collector-Emitter Breakdown Voltage: 600 V

Gate-Emitter Voltage: ±20 V

Low switching losses

Continuous Collector Current: 31 A (@ 25℃)

IRGBC30F IGBT Applications

Solar Inverter

General Motor Driver

PFC

Oil Pump

PTC Heater

Welder

HVAC Systems

Switching Device

UPS