IRGBC30U Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at

the same time having simpler gate-drive requirements of the familiar power

MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.

IRGBC30U Features

The switching-loss rating includes all "tail" losses

Optimized for high operating frequency (over 5kHz)

 See Fig. 1 for the Current vs. Frequency curve