IRGC25B120UB datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGC25B120UB Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Surface Mount
YES
Transistor Element Material
SILICON
JESD-609 Code
e0
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
O-XUUC-N
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
25A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
IGBT Type
NPT
Gate-Emitter Thr Voltage-Max
6V
RoHS Status
ROHS3 Compliant
IRGC25B120UB Product Details
IRGC25B120UB Description
These devices, known as IGBTs, were developed using a cutting-edge, unique trench gate fieldstop construction. These parts are from the HB series, the most recent generation of IGBTs, which maximizes the efficiency of any frequency converter by providing the best conduction and switching loss trade-offs. A safer paralleling operation is also made possible by the exceptionally narrow parameter distribution and somewhat positive VCE(sat) temperature coefficient.
IRGC25B120UB Features
Controller and Intel VID code applications both frequently employ