IGC10T65U8QX7SA1 Description

IGC10T65U8QX7SA1 belongs to the family of insulated gate bipolar transistors provided by Infineon Technologies. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of power transistor (Giant Transistor-GTR) and power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. IRGB30B60K IGBT is available in the TO-220AB package for the purpose of saving board space. 

IGC10T65U8QX7SA1 Features

Low EMI

Benchmark efficiency for motor control

Rugged transient performance

Excellent current sharing in parallel operation

Maximum Junction Temperature rated at 175°C

IGC10T65U8QX7SA1 Applications

Industrial motors

Civilian small-capacity motors

Converters (inverters)

Stroboscopic detectors for cameras