IRGC35B60PB Description

IRGC35B60PB is a 600v IGBT Die in wafer form. The Infineon IRGC35B60PB is suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses. It is applied to many fields, like Communications equipment, Broadband fixed line access, Enterprise systems, Enterprise projectors, Personal electronics, and Portable electronics. And the main parameter of this part is Trans IGBT Chip 600V 4A Die on Film/Wafe. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).

IRGC35B60PB Features

100% Tested at Probe

Available in Chip Pack, Unsawn wafer, Sawn on Film

Low VCE (on) Trench IGBT Technology

Low Switching Losses

Maximum Junction temperature 175 °C

5μs SCSOA

Square RBSOA

Positive VCE (on) Temperature Coefficient.

Tighter Distribution of Parameters

IRGC35B60PB Applications

Communications equipment 

Broadband fixed line access 

Enterprise systems 

Enterprise projectors 

Personal electronics 

Portable electronics