SIGC07T60SNCX1SA3                        Description

IGBT Chip. An Insulated Gate Bipolar Transistor is a BJT that is built in a way that allows for fast switching with low power losses, making it ideal for use as a switch in high power circuits. It is commonly packaged along with a flyback (also called freewheeling) diode, which prevents damage from inductive kickback.

SIGC07T60SNCX1SA3                       FEATURES

· 600V NPT technology

· 100μm chip

· short circuit prove

· positive temperature coefficient

· easy paralleling

SIGC07T60SNCX1SA3                       Applications

· drives