SIGC12T60NCX7SA2

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Manufacturer part number:SIGC12T60NCX7SA2

Manufacturer:Infineon Technologies

Description:SIGC12T60NCX7SA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SIGC12T60NCX7SA2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die
Operating Temperature	-55°C~150°C TJ
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	10A
Test Condition	300V, 10A, 27Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 10A
IGBT Type	NPT
Current - Collector Pulsed (Icm)	30A
Td (on/off) @ 25°C	21ns/110ns
RoHS Status	ROHS3 Compliant

SIGC12T60NCX7SA2 Description

SIGC12T60NCX7SA2 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC12T60NCX7SA2 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SIGC12T60NCX7SA2 has the common source configuration.

SIGC12T60NCX7SA2 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

SIGC12T60NCX7SA2 Applications

ISM applications

DC large signal applications

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