AIHD10N60RATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
AIHD10N60RATMA1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
39 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
150W
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
20A
Test Condition
400V, 10A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 10A
IGBT Type
Trench Field Stop
Gate Charge
64nC
Current - Collector Pulsed (Icm)
30A
Td (on/off) @ 25°C
14ns/192ns
Switching Energy
210μJ (on), 380μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.93697
$1.87394
AIHD10N60RATMA1 Product Details
AIHD10N60RATMA1 Description
The AIHD10N60RATMA1 is IGBT with an integrated diode in packages offering space-saving advantages. It uses TRENCHSTOPTM Reverse Conducting(RC ) technology for 600V applications offering.
AIHD10N60RATMA1 Features
OptimiseVCEsat and VF for low conduction losses
Smooth switching performance leading to low EMI levels
Very tight parameter distribution
Operating range of 1 to 20 kHz
Maximum junction temperature 175°C
Dynamically stress tested
Short circuit capability of 5μs
Best in class current versus package size performance
Qualified according to AECQ101
Pb-free lead plating;RoHS compliant(forPG-TO252:solder temperature260°C,MSL1)