IRG6I330U-111P  Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current

capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.

IRG6I330U-111P  Features

Advanced Trench IGBT Technology

Optimized for Sustain and Energy Recovery circuits in PDP applications

Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency

High repetitive peak current capability

Lead-Free package