IRG6I330U-111P datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG6I330U-111P Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Packaging
Tube
Published
2013
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
43W
Base Part Number
IRG6I330UPBF
Element Configuration
Single
Input Type
Standard
Power - Max
43W
Collector Emitter Voltage (VCEO)
1.55V
Max Collector Current
28A
Collector Emitter Breakdown Voltage
330V
Voltage - Collector Emitter Breakdown (Max)
330V
Current - Collector (Ic) (Max)
28A
Vce(on) (Max) @ Vge, Ic
1.55V @ 15V, 28A
Td (on/off) @ 25°C
39ns/120ns
Radiation Hardening
No
RoHS Status
RoHS Compliant
IRG6I330U-111P Product Details
IRG6I330U-111P Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.
IRG6I330U-111P Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency