IRGP4063PBF

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Manufacturer part number:IRGP4063PBF

Manufacturer:Infineon Technologies

Description:IRGP4063PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGP4063PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	330W
Number of Elements	1
Rise Time-Max	56ns
Element Configuration	Single
Power Dissipation	330W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	55 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	165 ns
Collector Emitter Voltage (VCEO)	2.14V
Max Collector Current	96A
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Gate to Source Voltage (Vgs)	30V
Collector Emitter Saturation Voltage	1.65V
Turn On Time	100 ns
Test Condition	400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.14V @ 15V, 48A
Turn Off Time-Nom (toff)	210 ns
IGBT Type	Trench
Gate Charge	95nC
Current - Collector Pulsed (Icm)	144A
Td (on/off) @ 25°C	60ns/145ns
Switching Energy	625μJ (on), 1.28mJ (off)
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	46ns
Height	20.7mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant