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IGW40N65F5FKSA1

  • IGW40N65F5FKSA1
  • IGW40N65F5FKSA1

IGW40N65F5FKSA1

IGW40N65F5FKSA1

Infineon Technologies

IGW40N65F5FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

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IGW40N65F5FKSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 255W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Power Dissipation 255W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 74A
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 20A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Gate Charge 95nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 19ns/160ns
Switching Energy 360μJ (on), 100μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 4.8V
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.042000 $4.042
10 $3.813208 $38.13208
100 $3.597366 $359.7366
500 $3.393741 $1696.8705
1000 $3.201643 $3201.643
IGW40N65F5FKSA1 Product Details

IGW40N65F5FKSA1 Description


IGW40N65F5FKSA1 is a 650v High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology. The Infineon IGW40N65F5FKSA1 can be applied in Solar converters, Uninterruptible power supplies, Welding converters, and Mid to high-range switching frequency converters. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IGW40N65F5FKSA1 is in the TO-247 package with 255W power dissipation.



IGW40N65F5FKSA1 Features


Best-in-Class efficiency in hard switching and resonant topologies

650V breakdown voltage

Low Qg

Ideal fit with SIC Schottky Diode in boost converters

Maximum junction temperature 175°C

Qualified according to JEDEC for target applications

Pb-free lead plating; RoHS compliant



IGW40N65F5FKSA1 Applications


Solar converters

Uninterruptible power supplies

Welding converters

Mid to high-range switching frequency converters


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